Factors affecting the nitridation behavior of Fe-base, Ni-base, ,and Co-base alloys in pure nitrogenBARNES, J. J; LAI, G. Y.Journal de physique. IV. 1993, Vol 3, Num 9, pp 167-174, issn 1155-4339, 1Conference Paper

A 35 ns 2K×8 HMOS static RAMSOOD, L. C; NICKS, K; MAUNTEL, R. W et al.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 498-508, issn 0018-9200Article

Serpentinites in Central South West Africa/Namibia. A reconnaissance study = Les serpentinites dans la zone centrale du Sud-Ouest Africain/Namibie. Etude de reconnaissanceBARNES, J. J.1982, Num 8, 90 p.Serial Issue

Evaluation of titanium as a diffusion barrier between aluminum and silicon for 1.2 μm CMOS integrated circuitsFARAHANI, M. M; TURNER, T. E; BARNES, J. J et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 11, pp 2835-2845, issn 0013-4651Article

Statistical circuit simulation modeling of CMOS VLSIHERR, N; BARNES, J. J.IEEE transactions on computer-aided design of integrated circuits and systems. 1986, Vol 5, Num 1, pp 15-22, issn 0278-0070Article

A model for stress generation and relief in oxide-metal systems during a temperature change = Un modèle pour la génération des contraintes et le relief dans les systèmes métal-oxyde au cours d'un changement de températureBARNES, J. J; GOEDJEN, J. G; SHORES, D. A et al.Oxidation of metals. 1989, Vol 32, Num 5-6, pp 449-469, issn 0030-770XArticle

Circuit techniques for a 25 ns 16K X1 SRAM using address-transition detectionBARNES, J. J; DE JESUS, A. L; NOVOSEL, D et al.IEEE journal of solid-state circuits. 1984, Vol 19, Num 4, pp 455-461, issn 0018-9200Article

Two 13-ns 64K CMOS SRAM's with very low active power and improved asynchronous circuit techniquesFLANNAGAN, S. T; REED, P. A; VOSS, P. H et al.IEEE journal of solid-state circuits. 1986, Vol 21, Num 5, pp 692-703, issn 0018-9200Article

A fast 8K×8 CMOS SRAM with internal power down design techniquesSOOD, L. C; GOLAB, J. S; SALTER, J et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 5, pp 941-950, issn 0018-9200Article

Thin dielectric quality/yield study using a constant voltage ramp methodBRYANT, F; LIOU, F.-T; HAN, Y.-P et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 1, pp 283-287, issn 0013-4651, 5 p.Article

Thomas Aspinwall : First Transatlantic Literary AgentBARNES, J. J; BARNES, P. P.Papers of the Bibliographical Society of America. 1984, Vol 78, Num 3, pp 321-331, issn 0006-128XArticle